PART |
Description |
Maker |
BSP316P |
Low Voltage MOSFETs - Small Signal MOSFET, -100V, SOT-223, RDSon =1.80 SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSP372 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0,31 Ohm, 1.7A, LL SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
BSP171P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
SN7002N |
SIPMOS Small-Signal-Transistor Low Voltage MOSFETs - SOT23, 60V, 5ohm, 0.2A
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSP170P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
SPP15P10P |
Low Voltage MOSFETs - Power MOSFET, -100V, TO-220, RDSon = 0.24 SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSS159N BSS169N |
Low Voltage MOSFETs - Depletion MOSFET, 60V, SOT-23,RDSon = 8Ohm, 0.13A, NL SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSO200P03S |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8, Ron = 20m OptiMOS-P Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSO612CV |
Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.12/0.30Ohm, Id(N) = 3.1A, Id(P) = -2.0A, NL SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSL211SP BSL211 |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, TSOP-6 OptiMOS -P Small-Signal-Transistor 的OptiMOS磷小信号晶体
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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